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Dr. Kars Troost

Senior Product Manager

Product Group EUV, ASML

 

Profile

 
Education: 
PhD Solid State Physics, Rijksuniversiteit Utrecht, The Netherlands
 
Experience:
Senior Product Manager ASML
Product Manager FEI Company
Manager Philips Electron Optics
Scientist Philips Research
 
Abstract:
 
EUV Lithography for cost effective extension of Moore’s law 

 

The first NXE:3300 systems with an NA of 0.33 have been shipped to customers after having shown overlay and imaging performance in line with 22nm device work, and are currently being installed. Dedicated chuck overlay performance and full-wafer CDU performance of <2nm have been shown.

Remaining major challenges are productivity and cost of ownership, together translating to a cost-effective extension of the lithography roadmap by insertion of EUVL in high-volume manufacturing. High volume manufacturing (HVM) of the devices and processes now in development is expected to be done with the third and beyond generations EUV scanners - the NXE:3300B, positioned at a resolution of 22nm and being extended to 18nm with off-axis illumination and to 16nm by flexible pupil formation via FlexPupil. The subsystem performance has been enhanced to support these imaging resolutions and overall productivity enhancements have been integrated into the platform consistent with 125 wph. Since EUV reticles are not planned to use a pellicle, special attention has been given to reticle-added-defects performance in terms of system design and machine build, plus maintenance procedures. In parallel, however, options for full-scale pellicles are being investigated.

In this paper we will summarize key lithographic performance of the NXE:3300B, the NXE platform and imaging flexibility improvements made, the current status of EUV sources and development for the high-power sources needed for HVM.

Lastly, the possibilities for EUV roadmap extension will be reviewed.