


	Dr. Anthony Yen / 嚴濤南 Director Nanopatterning Technology Infrastructure Division, TSMC

Profile
Education : Ph. D. in Electrical Engineering MIT, USA
Experience : Senior Vice President, Cymer Inc., USA Co-Director, Lithography Division SEMATECH, USA Department manager, TSMC, Taiwan

Abstract:

Mask Technology Development in EUV Lithography

This presentation aims to provide an overview of progress and challenges in the development of mask technology for EUV lithography, including mask inspection, repair, cleaning, etc. Inspection of EUV masks consists of inspecting both mask blanks and patterned masks. The effectiveness of 193nm-wavelength-based inspectors will be discussed. Repair of EUV masks consists of repair of defects present in the absorber material and compensation for the effect of multi-layer (ML) defects. For the latter, repair of bumps and pits on the low-thermal-expansion-material substrate prior to ML deposition is studied to improve blank quality; Compensation repair in the absorber is used to partially recover the lost lithographic process window due to ML defects. Cleaning of EUV masks consists of front and backside particle removal. New chemical implementation with recipe optimization is employed to improve particle removal efficiency (PRE) while minimizing absorber “shrinkage” and ML capping layer damage. Since the backside of the mask is pattern-free, mechanical force can be implemented in the cleaning to achieve high PRE. Manufacturing adoption of EUV lithography hinges on defect-free masks. This is a requirement not only in mask making but also in mask transportation, storage, and exposure inside the EUV scanner. Lacking a pellicle, we are always at risk. Keeping such risk to a minimum requires discipline in handling and extreme cleanliness inside the scanner. Ultimately, a sturdy yet highly transparent pellicle material must be available for high-volume manufacturing using EUV lithography.