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Dr. Rainer Knippelmeyer


Group VP R&D / CTO and General Manager Wafer Bonder

SÜSS MicroTec AG          
 

Profile


Rainer Knippelmeyer studied Physics and Economy at Universities Münster, Hagen and Villeurbanne and acquired his PhD in Physics from University of Münster in 2000. 

Before he joined SÜSS MicroTec AG in 2010, he worked on nanotechnology and semiconductor products in various functions in Product & Business Development, R&D Management and General Management for the Carl Zeiss Group in Germany and in the US.

Since 2010 he has headed the Technology Development at SÜSS MicroTec as VP R&D and CTO. Since 2011 he has additionally managed the SUSS’ Wafer Bonder Business as General Manager.
 
 

Abstract:


Update in Material and Process Technologies for 2.5/3D IC

 

Technology advances such as 3D Integration are expanding the potential applications of products. These new technologies are also pushing the envelope of what’s currently possible for many production processes. 

The 3D Integration technology employing TSV (through silicon via) has increasingly become attractive. Thin wafer handling (for temporary bonding / de-bonding) temporary wafer bonding and permanent wafer bonding are the key enabling technologies for 3D Integration. 

After attaching the device wafer to a solid carrier it can be thinned to expose TSV nails, handled through backside RDL (re-distribution layer) steps and micro-bumping. For reliable thin wafer processing, the selection of a suitable temporary bonding adhesive is crucial. Distinct adhesive properties such as thermal stability, chemical resistance and mechanical strength are required for the actual production processes. To meet the tight requirements for recent new applications, room temperature mechanical de-bonding methods have been improved over the last years and tailored for specific applications. 

Laser de-bonding at room temperature is an another alternative besides mechanical de-bonding. Glass carriers with a transmission for the corresponding laser- wavelength are used for de-bonding.  

The presentation will include a description about mechanical and laser de-bonding processes at room temperature inducing zero- mechanical stress and no thermal stress on the device wafer and therefore overcomes the major drawbacks which have been described with other de-bonding methods. 

A material and process survey about the available temporary bonding/debonding processes will be introduced as well as a comparison of readiness and cost of ownership of those techniques.