SEMI Taiwan Homepage
SEMICON Taiwan 2012
   
   

Dr. Makoto Motoyoshi

 

Dr. Makoto Motoyoshi

 

CEO

 

Tohoku-MicroTec Co., Ltd.

 

Profile

 
2005-2010 ZyCube Co., Ltd. (President ‘08-’09) R & D for 3D-LSI Integration
1992-  Sony Corporation Development of SRAM, NVM(MRAM, FeRAM, RRAM) devices 
1982-  Hitachi Ltd. Development of  SRAM device
1982 Received the M.S. degree from Tohoku University, Sendai, Japan
Owned   28 US patents & 81 Jpn. patents
   
   

The Way to Select The Optimum 3D IC Technology


 

Abstract

 
LSI technology has been widely spread in two dimensional over the past three decades and now, it moves into the era of sub-20nm node.  From economical view point, however, the development and manufacturing cost for SOC (System on Chip) has become sky-rocketing.  The 3D-IC is the one solution to cut the cost without degradation of performances.  By separating 3D-LSI technology into elementary technologies such as (1) TSV formation, (2) bump formation, (3) wafer thinning, (4) chip/wafer alignment, and (5) chip/wafer bonding, many methods and many combinations to realize 3D-ICs can be developed.  At least the 3D-IC technology hasn’t been unified.  The integration methods hinge upon the target application, the supply chain of base chips, the fabrication site, etc.  In this Forum, I will update the recent diversity of 3D-IC technologies and talk about the optimum technology selection by taking our 3D integration technology with TSV and bump with few μm dimensions as an example.